Isithando somlilo esisebenzayo se-PJ-RSJ SiC

Intshayelelo yomzekelo

PJ-RIsithando somoya se-SJ senzelwe ukutshiza iimveliso zeSiC. Sifanelekile ukutshiza iimveliso zeSiC ngendlela evuselelayo. Sisebenzisa i-Graphite muffle ukuthintela ungcoliseko yiSilica.

I-SiC Reaction sintering yinkqubo yoxinano apho i-reactive liquid silicon okanye i-silicon alloy ifakwa emzimbeni we-ceramic one-porous ceramic ukuze iphendule kwi-silicon carbide, ize idityaniswe nee-silicon carbide particles zokuqala ukuze zizalise ii-pores eziseleyo emzimbeni.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Inkcazo ephambili

Ikhowudi yomzekelo		Ubukhulu bendawo yomsebenzi mm			Umthamo womthwalo kg
Ikhowudi yomzekelo		ubude	ububanzi	ukuphakama	Umthamo womthwalo kg
PJ-RSJ	322	300	200	200	100
PJ-RSJ	633	600	300	300	200
PJ-RSJ	933	900	300	300	400
PJ-RSJ	1244	1200	400	400	600
PJ-RSJ	1855	1800	500	500	1000
PJ-RSJ	322	300	200	200	100
Ubushushu obuphezulu bokusebenza:1800℃ Ukufana kobushushu:≤±5℃ kwi-1300℃;≤±10℃ kwi-1600℃;≤±20℃ kwi-1600℃ engaphezulu I-vacuum yokugqibela:4.010^-1Pa; Izinga lokunyusa uxinzelelo:≤0.67 Pa/h; Uxinzelelo lokupholisa igesi:*<2 Ibha.